Frequency Response of Metal-Oxide Memristors

نویسندگان

چکیده

Memristors have been at the forefront of nanoelectronics research for last few decades, offering a valuable component to reconfigurable computing. Their attributes studied extensively along with applications that leverage their state-dependent programmability in static fashion. However, practical memristor-based alternating current (ac) circuits rather sparse, only examples found literature where use is emulated higher frequencies. In this work, we study behavior metal-oxide memristors under noninvasive ac perturbation range frequencies, from 10 3 xmlns:xlink="http://www.w3.org/1999/xlink">7 Hz. Metal-oxide are behave as RC low-pass filters and they present variable cut-off frequency when state switched, thus providing window reconfigurability used filters. We further across distinct material systems, show usable devices can be tailored encompass specific ranges by amending devices' capacitance. This extends knowledge on characterizing frequency-dependent characteristics, useful insights circuits.

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ژورنال

عنوان ژورنال: IEEE Transactions on Electron Devices

سال: 2021

ISSN: ['0018-9383', '1557-9646']

DOI: https://doi.org/10.1109/ted.2021.3080233